es2a thru es2d document number 88587 24-oct-05 vishay general semiconductor www.vishay.com 1 do-214aa (smb) surface mount ultrafast plastic rectifier major ratings and characteristics i f(av) 2.0 a v rrm 50 v to 200 v i fsm 50 a t rr 20 ns v f 0.90 v t j max. 150 c features ? glass passivated chip junction ? ideal for automated placement ? ultrafast recovery times for high efficiency ? low forward voltage, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020c ? solder dip 260 c, 40 seconds typical applications for use in high frequency rectification and freewheel- ing application in switch ing mode converters and inverters for consumer, computer, automotive and telecommunication mechanical data case: do-214aa (smb) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings t a = 25 c unless otherwise specified parameter symbol es2a es2b es2c es2d unit device marking code ea eb ec ed maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at t l = 110 c i f(av) 2.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 50 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88587 24-oct-05 es2a thru es2d vishay general semiconductor electrical characteristics t a = 25 c unless otherwise specified notes: (1) pulse test: 300 ms pulse width, 1 % duty cycle thermal characteristics t a = 25 c unless otherwise specified notes: (1) units mounted on p.c.b. 5.0 x 5.0 mm (0.013 mm thick) land areas ratings and characteristics curves (t a = 25 c unless otherwise specified) parameter test condition symbol es2a es2b es2c es2d unit maximum instantaneous forward voltage at 2.0 a (1) v f 0.90 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 10 350 a max. reverse recovery time i f = 0.5 a, i r = i.0 a, l rr = 0.25 a t rr 20 ns maximum reverse recovery time i f = 2.0 a, v r = 30 v, di/dt = 50 a/s, i r = 10 % i rm t j = 25 c t j = 100 c t rr 30 50 ns maximum stored charge i f = 2.0 a, v r = 30 v, di/dt = 50 a/s, i r = 10 % i rm t j = 25 c t j = 100 c q rr 10 25 nc typical junction capacitance at 4.0 v, 1 mhz c j 18 pf parameter symbol es2a es2b es2c es2d unit typical thermal resistance (1) r ja r jl 75 20 c/w figure 1. maximum forward current derating curve 0 3.0 8 0 90 100 110 120 130 140 150 a v erage for w ard rectified c u rrent (a) lead temperat u re ( c) 2.0 1.0 resisti v e or ind u cti v e load p.c.b. mo u nted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas figure 2. maximum non-repetitive peak forward surge current 0 10 20 30 40 50 60 1 100 10 peak for w ard s u rge c u rrent (a) 8 .3 ms single half sine- w a v e at t l = 110 c nu m b er of cycles at 60 hz
es2a thru es2d document number 88587 24-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical revers e leakage characteristics t j = 150 c t j = 125 c t j = 100 c t j = 25 c 0.2 0.4 0.6 0. 8 1 1.2 1.4 instantaneo u s for w ard v oltage ( v ) instanta neo u s for w ard c u rrent (a) 100 10 1 0.1 0.01 1 10 100 1000 10000 t j = 150 c t j = 125 c t j = 100 c t j = 25 c percent of rated peak re v erse v oltage ( % ) 0204060 8 0 100 0.1 instantaneo u s re v erse leakage c u rrent ( a) figure 5. typical junction capacitance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 10 100 20 10 30 40 50 60 0 t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0 (0) 0.205 ( 5.21 ) 0.220 (5.59) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band d o -214aa ( s mb) 0.0 8 5 max. (2.159 max.) 0.220 ref 0.0 8 6 mi n . (2.1 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
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